Thank you for visiting the Stanford 2D Trends website! The purpose of this site is to compile and summarize the "trends" in 2D Semiconductor device research. Our hope is that this website will facilitate important discuss within the 2D device community and help researchers benchmark their results.

We also recognize our data is not an exhaustive search of all the reports on 2D transistors. If you think there is research not shown here that should be represented, please contact us. We look forward to your thoughts and comments.

The most important thing to remember when looking at this website is that correlation is NOT causation. Just because the data shows a trend, does not mean there is a correlation between the x and y variables. Correlation could emerge from circumstantial causes, such as maybe there is a trend that decreasing contact spacing actually decreases Ion. This does not make sense in the context of resistance and could be because fabricating shorter channel lengths is more difficult and leads to poorer device characteristics.

For citing this work, please use this format: C.J. McClellan, S.V. Suryavanshi, C.D. English, K.K.H. Smithe, C.S. Bailey, R.W. Grady, E. Pop , "2D Device Trends," Accessed on: MM/DD/YYYY. [Online]. Available: http://2d.stanford.edu/2D_Trends.html and replacing the access date with the date you accessed 2D Trends data for your publication. Including the correct access date is important as we routinely update 2D Trends data and your citation should reflect the data presented on the website at that time, which can be adjusted with the "Select Access Date:" input on the main page.